发明名称 |
METAL-OXIDE-SEMICONDUCTOR (MOS) DEVICES WITH INCREASED CHANNEL PERIPHERY AND METHODS OF MANUFACTURE |
摘要 |
A semiconductor device includes a silicon carbide (SiC) drift layer disposed on a (0001) oriented SiC substrate. The SiC drift layer has a non-planar surface including a plurality of repeating features that are oriented parallel to a length of a channel of the semiconductor device. Further, the channel region is disposed in a particular crystallographic plane of the SiC drift layer. |
申请公布号 |
CA2855325(A1) |
申请公布日期 |
2015.01.02 |
申请号 |
CA20142855325 |
申请日期 |
2014.06.26 |
申请人 |
GENERAL ELECTRIC COMPANY |
发明人 |
BOLOTNIKOV, ALEXANDER VIKTOROVICH;LOSEE, PETER ALMERN |
分类号 |
H01L21/335;H01L29/04;H01L29/24 |
主分类号 |
H01L21/335 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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