发明名称 |
METAL-OXIDE-SEMICONDUCTOR (MOS) DEVICES WITH INCREASED CHANNEL PERIPHERY AND METHODS OF MANUFACTURE |
摘要 |
<p>A semiconductor device includes a drift layer disposed on a substrate. The drift layer has a non-planar surface having a plurality of repeating features oriented parallel to a length of a channel of the semiconductor device. Further, each the repeating features have a dopant concentration higher than a remainder of the drift layer.</p> |
申请公布号 |
CA2855324(A1) |
申请公布日期 |
2015.01.02 |
申请号 |
CA20142855324 |
申请日期 |
2014.06.26 |
申请人 |
GENERAL ELECTRIC COMPANY |
发明人 |
BOLOTNIKOV, ALEXANDER VIKTOROVICH;LOSEE, PETER ALMERN |
分类号 |
H01L21/04;H01L29/06;H01L29/36 |
主分类号 |
H01L21/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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