| 摘要 |
<p>The present invention relates to a thin film transistor substrate and a manufacturing method thereof. The thin film transistor substrate comprises: a gate electrode and a gate pad formed on a substrate; a gate insulation film formed on the gate electrode and the gate pad; an active layer formed on the gate insulation film; an etch stopper formed to have a first hole and a second hole on the active layer; a source electrode formed on the etch stopper, and connected to the active layer through the first hole; a drain electrode formed to face the source electrode on the etch stopper, and connected to the active layer through the second hole; a protective film formed on the source electrode and drain electrode; a pixel electrode formed on the protective film, and connected to the drain electrode; and a gate pad electrode formed on the protective film, and electrically connected to the gate pad.</p> |
