发明名称 THIN FILM TRANSISTOR AND ORGANIC LIGHT EMITTING DEVICE INCLUDING POLYCRYSTALLINE SILICON LAYER
摘要 A method of forming a polycrystalline silicon layer includes forming a first amorphous silicon layer and forming a second amorphous silicon layer such that the first amorphous silicon layer and the second amorphous silicon layer have different film qualities from each other, and crystallizing the first amorphous silicon layer and the second amorphous silicon layer using a metal catalyst to form a first polycrystalline silicon layer and a second polycrystalline silicon layer. A thin film transistor includes the polycrystalline silicon layer formed by the method and an organic light emitting device includes the thin film transistor.
申请公布号 US2015001523(A1) 申请公布日期 2015.01.01
申请号 US201414490725 申请日期 2014.09.19
申请人 SAMSUNG DISPLAY CO., LTD. 发明人 PARK Byoung-Keon;PARK Jong-Ryuk;CHUNG Yun-Mo;LEE Tak-Young;SEO Jin-Wook;LEE Ki-Yong;JEONG Min-Jae;SON Yong-Duck;SO Byung-Soo;PARK Seung-Kyu;LEE Dong-Hyun;LEE Kil-Won;Jung Jae-Wan
分类号 H01L27/32;H01L29/10;H01L29/786 主分类号 H01L27/32
代理机构 代理人
主权项
地址 Yongin-City KR