PLASMA ETCHING APPARATUS AND METHOD

摘要

A plasma etching apparatus includes a first RF power supply unit configured to apply a first RF power for plasma generation to a first electrode or a second electrode disposed opposite to each other in a process container configured to be vacuum-exhausted, a second RF power supply unit configured to apply a second RF power for ion attraction to the second electrode, and a controller configured to control the second RF power supply unit. The second RF power supply unit includes a second RF power supply and a second matching unit. The controller is preset to control the second RF power supply unit to operate in a power modulation mode that executes power modulation in predetermined cycles between a first power and a second power, while controlling the second matching unit to switch a matching operation in synchronism with the power modulation.

主权项

1. A plasma etching apparatus comprising:
a process container configured to be vacuum-exhausted; a first electrode disposed inside the process container; a second electrode disposed opposite to the first electrode and configured to support a target substrate thereon; a first RF power supply unit configured to apply a first RF power for plasma generation to the first electrode or the second electrode; a second RF power supply unit configured to apply a second RF power for ion attraction to the second electrode; a process gas supply unit configured to supply a process gas into the process container; and a controller configured to control the second RF power supply unit, wherein the second RF power supply unit includes a second RF power supply and a second matching unit, and the controller is preset to control the second RF power supply unit to operate in a power modulation mode that executes power modulation in predetermined cycles between a first power and a second power, while controlling the second matching unit to switch a matching operation in synchronism with the power modulation.