读取电压设定方法、控制电路与记忆体储存装置;DATA READING METHOD, AND CONTROL CIRCUIT, AND MEMORY STORAGE APPARATUS USING THE SAME

摘要

本发明提出一种用于可复写式非挥发性记忆体模组的读取电压设定方法。此方法包括：读取储存于字元线的记忆胞中的检测资料来获取对应的临界电压分布，并根据此临界电压分布来判断对应此字元线的预设读取电压；施予依据预设读取电压所获得的多个检测读取电压至此字元线以读取多个检测页资料；以及根据此些检测页资料的错误位元数之中的最小错误位元数，决定对应此字元线的优化读取电压。本方法更包括计算优化读取电压与预设读取电压之间的差值作为对应此字元线的读取电压调整值；以及在重读表中记录对应此位元线的读取电压调整值。; applying a plurality of test read voltages obtained according to the default read voltage to the word line to read a plurality of test page data; and determining an optimized read voltage corresponding to the word line according to the minimum error bit number among a plurality of error bit numbers of the test page data. The method further includes calculating a difference between the default read voltage and the optimized read voltage as a read voltage adjustment value corresponding to the word line and recording the read voltage adjustment value in a retry table.