发明名称 |
SEMICONDUCTOR DEVICE INTEGRATING A VOLTAGE DIVIDER AND PROCESS FOR MANUFACTURING A SEMICONDUCTOR DEVICE |
摘要 |
A semiconductor device includes: a semiconductor substrate; a high-voltage first resistive structure which extends along a spiral path above the substrate and is separated from the substrate by a first dielectric layer; and a conductive shielding structure, including a plurality of first shielding strips, which are arranged in sequence along respective portions of the first resistive structure and are separated from the first resistive structure by a second dielectric layer. |
申请公布号 |
US2015001677(A1) |
申请公布日期 |
2015.01.01 |
申请号 |
US201414309357 |
申请日期 |
2014.06.19 |
申请人 |
STMicroelectronics S.r.l. |
发明人 |
Palumbo Vincenzo;Venturato Mirko |
分类号 |
H01L49/02 |
主分类号 |
H01L49/02 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor device comprising:
a semiconductor substrate; a high-voltage first resistive structure extending along a spiral path above the substrate and separated from the substrate by a first dielectric layer; and a conductive shielding structure, comprising a plurality of first shielding strips arranged in sequence along respective portions of the first resistive structure and separated from the first resistive structure by a second dielectric layer. |
地址 |
Agrate Brianza (MB) IT |