发明名称 SEMICONDUCTOR DEVICE INTEGRATING A VOLTAGE DIVIDER AND PROCESS FOR MANUFACTURING A SEMICONDUCTOR DEVICE
摘要 A semiconductor device includes: a semiconductor substrate; a high-voltage first resistive structure which extends along a spiral path above the substrate and is separated from the substrate by a first dielectric layer; and a conductive shielding structure, including a plurality of first shielding strips, which are arranged in sequence along respective portions of the first resistive structure and are separated from the first resistive structure by a second dielectric layer.
申请公布号 US2015001677(A1) 申请公布日期 2015.01.01
申请号 US201414309357 申请日期 2014.06.19
申请人 STMicroelectronics S.r.l. 发明人 Palumbo Vincenzo;Venturato Mirko
分类号 H01L49/02 主分类号 H01L49/02
代理机构 代理人
主权项 1. A semiconductor device comprising: a semiconductor substrate; a high-voltage first resistive structure extending along a spiral path above the substrate and separated from the substrate by a first dielectric layer; and a conductive shielding structure, comprising a plurality of first shielding strips arranged in sequence along respective portions of the first resistive structure and separated from the first resistive structure by a second dielectric layer.
地址 Agrate Brianza (MB) IT