| 发明名称 |
DEVICE FOR SPOT SIZE MEASUREMENT AT WAFER LEVEL USING A KNIFE EDGE AND A METHOD FOR MANUFACTURING SUCH A DEVICE |
| 摘要 |
The invention relates to a device for spot size measurement at wafer level in a multi charged particle beam lithography system. The device comprises a knife edge structure on top of a scintillating material, such a YAG material. The knife edge structure is arranged in a Si wafer which has a top plane at a sharp angle to a (1 1 0) plane of the Si. In an embodiment the angle is in the range from 2 to 4 degrees, preferably in the range from 2.9-3.1 degrees. The invention relates in addition to a method for manufacturing a device for spot size measurement at wafer level in a multi charged particle beam lithography system. |
| 申请公布号 |
US2015001423(A1) |
申请公布日期 |
2015.01.01 |
| 申请号 |
US201214373893 |
申请日期 |
2012.12.05 |
| 申请人 |
Mapper Lithography IP B.V. |
发明人 |
Meijer Jan Andries;Scheffers Paul IJmert;Sarr Abdou |
| 分类号 |
H01J37/252;H01J37/30;H01J37/317 |
主分类号 |
H01J37/252 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. Device for spot size measurement at wafer level in a multi charged particle beam lithography system, comprising a knife edge structure on top of a scintillating material, characterized in that the knife edge structure is arranged in a Si wafer which has a top plane at a sharp angle to a (1 1 0) plane of the Si such that an etched through opening in said Si wafer comprises at least one edge with an undercut angle which is suitable for use as a knife edge, when the top plane of the Si wafer is substantially arranged in a focus plane of the multi charged particle beam lithography system. |
| 地址 |
Delft NL |
