发明名称 |
Copper Wiring Forming Method |
摘要 |
Provided is a method of forming a copper (Cu) wiring in a recess formed to have a predetermined pattern in an insulating film formed on a surface of a substrate. The method includes: forming a barrier film at least on a surface of the recess, the barrier film serving as a barrier for blocking diffusion of Cu; forming a Ru film on the barrier film by Chemical Mechanical Deposition (CVD); forming a Cu alloy film on the Ru film by Physical Vapor Deposition (PVD) to bury the recess; forming a Cu wiring using the Cu alloy film buried in the recess; and forming a dielectric film on the Cu wiring. |
申请公布号 |
US2015004784(A1) |
申请公布日期 |
2015.01.01 |
申请号 |
US201414316251 |
申请日期 |
2014.06.26 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
YOKOYAMA Osamu;HAN Cheonsoo;SAKUMA Takashi;YASUMURO Chiaki;HIRASAWA Tatsuo;ISHIZAKA Tadahiro;SUZUKI Kenji |
分类号 |
H01L21/768 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
1. A method of forming a copper (Cu) wiring in a recess formed to have a predetermined pattern in an insulating film formed on a surface of a substrate, the method comprising:
forming a barrier film at least on a surface of the recess, the barrier film serving as a barrier for blocking diffusion of Cu; forming a Ru film on the barrier film by Chemical Mechanical Deposition (CVD); forming a Cu alloy film on the Ru film by Physical Vapor Deposition (PVD) to bury the recess; forming a Cu wiring using the Cu alloy film buried in the recess; and forming a dielectric film on the Cu wiring. |
地址 |
Tokyo JP |