发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 A semiconductor memory device includes a memory array including memory blocks stacked in a plurality of layers on a substrate, first vertical lines suitable for coupling bit lines, and second vertical lines suitable for coupling word lines of the memory blocks vertically stacked, wherein the memory blocks include selection lines vertically stacked and separated from each other, and the bit lines are coupled to the memory blocks and arranged in a plurality of layers.
申请公布号 US2015003158(A1) 申请公布日期 2015.01.01
申请号 US201314094300 申请日期 2013.12.02
申请人 SK hynix Inc. 发明人 ARITOME Seiichi
分类号 G11C16/04 主分类号 G11C16/04
代理机构 代理人
主权项 1. A semiconductor memory device, comprising: a memory array including memory blocks stacked in a plurality of layers on a substrate; first vertical lines suitable for coupling bit lines; and second vertical lines suitable for coupling word lines of the memory blocks that are vertically stacked, wherein the memory blocks include selection lines vertically stacked and separated from each other, and wherein the bit lines are coupled to the memory blocks and arranged in the plurality of layers.
地址 Gyeonggi-do KR