发明名称 |
DESIGN STRUCTURE FOR AN INDUCTOR-CAPACITOR VOLTAGE-CONTROLLED OSCILLATOR |
摘要 |
Embodiments of the present invention provide a design structure and method for compensating for a change in frequency of oscillation (FOO) of an LC-tank VCO that includes a first node; second node; inductor; first capacitive network (FCN) that allows the design structure to obtain a target FOO; compensating capacitive (CCN) network that compensates for a change in the design structure's FOO; second capacitive network (SCN) that allows the design structure to obtain a desired FOO; a filter that supplies a voltage to the SCN and is coupled to the SCN; a transconductor that compensates for a change in the design structure's FOO; and a sub-circuit coupled to the SCN that generates and supplies voltage to the CCN sufficient to allow the CCN to compensate for a reduction in the design structure's FOO. The first and second nodes are coupled to the inductor, FCN, CCN, SCN, and sub-circuit. |
申请公布号 |
US2015002237(A1) |
申请公布日期 |
2015.01.01 |
申请号 |
US201414491037 |
申请日期 |
2014.09.19 |
申请人 |
International Business Machines Corporation |
发明人 |
Ainspan Herschel A.;Kelkar Ram;Malladi Anjali R.;Malladi Ramana M. |
分类号 |
H03B5/12;H03L7/04 |
主分类号 |
H03B5/12 |
代理机构 |
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代理人 |
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主权项 |
1. A circuit, comprising:
a sub-circuit comprising:
a first resistor coupled to a supply voltage;a second resistor coupled to the first resistor via a first node; anda first field-effect transistor gate-coupled to the first node via a second node, wherein the first field-effect transistor is source-coupled to the supply voltage, and wherein the first field-effect transistor is drain-coupled to a third resistor via a third node. |
地址 |
Armonk NY US |