Quantum Tunneling Devices and Circuits with Lattice-Mismatched Semiconductor Structures

摘要

Structures include a tunneling device disposed over first and second lattice-mismatched semiconductor materials. Process embodiments include forming tunneling devices over lattice-mismatched materials.

主权项

1. A structure comprising:
a first device on a substrate, the substrate comprising a first crystalline semiconductor material; and a second device on the substrate and disposed on a second crystalline semiconductor material, the second device comprising a tunneling diode, the first device being electrically coupled to the second device, the second crystalline semiconductor material being lattice mismatched to the first crystalline semiconductor material, defects in the second crystalline semiconductor material arising from the lattice mismatch terminating at a lateral surface of the second crystalline semiconductor material.