发明名称 HYBRID MULTI-LEVEL MEMORY ARCHITECTURE
摘要 Hybrid multi-level memory architecture technologies are described. A System on Chip (SOC) includes multiple functional units and a multi-level memory controller (MLMC) coupled to the functional units. The MLMC is coupled to a hybrid multi-level memory architecture including a first-level dynamic random access memory (DRAM) (near memory) that is located on-package of the SOC and a second-level DRAM (far memory) that is located off-package of the SOC. The MLMC presents the first-level DRAM and the second-level DRAM as a contiguous addressable memory space and provides the first-level DRAM to software as additional memory capacity to a memory capacity of the second-level DRAM. The first-level DRAM does not store a copy of contents of the second-level DRAM.
申请公布号 US2015006805(A1) 申请公布日期 2015.01.01
申请号 US201313931701 申请日期 2013.06.28
申请人 FEEKES DANNIE G.;RAIKIN SHLOMO;FANNING BLAISE;RAY JOYDEEP;MANDELBLAT JULIUS;BERKOVITS ARIEL;SHIFER ERAN;GREENFIELD ZVIKA;BOLOTIN EVGENY 发明人 FEEKES DANNIE G.;RAIKIN SHLOMO;FANNING BLAISE;RAY JOYDEEP;MANDELBLAT JULIUS;BERKOVITS ARIEL;SHIFER ERAN;GREENFIELD ZVIKA;BOLOTIN EVGENY
分类号 G06F3/06 主分类号 G06F3/06
代理机构 代理人
主权项 1. A system on chip (SoC) comprising: a plurality of functional units; and a multi-level memory controller (MLMC) for a hybrid multi-level memory architecture comprising a first-level dynamic random access memory (DRAM) that is located on-package of the SOC and a second-level DRAM that is located off-package of the SOC, wherein the MLMC is coupled to the plurality of functional units, wherein the MLMC is to present the first-level DRAM and the second-level DRAM as a contiguous addressable memory space and to provide the first-level DRAM to software as additional memory capacity to a memory capacity of the second-level DRAM, and wherein the first-level DRAM does not store a copy of contents of the second-level DRAM.
地址 Newmarket-on-Fergus IE