发明名称 |
NONVOLATILE MEMORY DEVICE AND AN ERASE METHOD THEREOF |
摘要 |
A nonvolatile memory device includes: a plurality of cell strings disposed on a substrate, wherein at least one of the plurality of cell strings comprises a plurality of cell transistors and at least one ground select transistor stacked in a direction substantially perpendicular to the substrate, and the substrate and a channel region of the plurality of cell strings have a same conductivity type; a substrate bias circuit configured to provide an erase voltage to the substrate in an erase operation; and a ground select line voltage generator configured to provide a ground select line saturation voltage to the at least one ground select transistor in the erase operation. |
申请公布号 |
US2015003170(A1) |
申请公布日期 |
2015.01.01 |
申请号 |
US201414303741 |
申请日期 |
2014.06.13 |
申请人 |
Kim Ju-hyung;Kang Chang-seok;Kim Young-suk |
发明人 |
Kim Ju-hyung;Kang Chang-seok;Kim Young-suk |
分类号 |
G11C16/14 |
主分类号 |
G11C16/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Yongin-si KR |