| 发明名称 |
Flash Memory Device and Method for Handling Power Failure THereof |
| 摘要 |
A flash memory device. In one embodiment, the flash memory device includes a flash memory, a diode, a controller, and a capacitor. The flash memory has a voltage source pin. The diode is coupled between a voltage source and the voltage source pin of the flash memory. The controller is coupled to the flash memory via a data bus.;The capacitor is coupled between the voltage source pin of the flash memory and a ground, and supplies power to the flash memory to enable the flash memory to complete writing of at least one data page when the level of the voltage source is lowered. |
| 申请公布号 |
US2015003153(A1) |
申请公布日期 |
2015.01.01 |
| 申请号 |
US201414485265 |
申请日期 |
2014.09.12 |
| 申请人 |
Silicon Motion, Inc. |
发明人 |
Chen Hung-Chiang |
| 分类号 |
G11C16/30;G11C16/10 |
主分类号 |
G11C16/30 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A flash memory device, comprising:
a flash memory, having a voltage source pin; a diode, coupled between a voltage source and the voltage source pin of the flash memory; a controller, coupled to the flash memory via a data bus; and a capacitor, coupled between the voltage source pin of the flash memory and a ground, supplying power to the flash memory to enable the flash memory to complete writing of at least one data page when the level of the voltage source is lowered. |
| 地址 |
Jhubei City TW |
