发明名称 Non-volatile Memory Device And A Method Of Programming Such Device
摘要 A non-volatile memory device has a charge pump for providing a programming current and an array of non-volatile memory cells. Each memory cell of the array is programmed by the programming current from the charge pump. The array of non-volatile memory cells is partitioned into a plurality of units, with each unit comprising a plurality of memory cells. An indicator memory cell is associated with each unit of non-volatile memory cells. A programming circuit programs the memory cells of each unit using the programming current, when fifty percent or less of the memory cells of each unit is to be programmed, and programs the inverse of the memory cells of each unit and the indicator memory cell associated with each unit, using the programming current, when more than fifty percent of the memory cells of each unit is to be programmed.
申请公布号 US2015003166(A1) 申请公布日期 2015.01.01
申请号 US201414449926 申请日期 2014.08.01
申请人 Silicon Storage Technology, Inc. 发明人 Tran Hieu Van;Nguyen Hung Quoc;Ly Anh;Vu Thuan
分类号 G11C16/10;G11C16/26;H01L27/115 主分类号 G11C16/10
代理机构 代理人
主权项 1. A non-volatile memory device comprising: a charge pump for providing a programming current; an array of non-volatile memory cells, with each memory cell programmed by the programming current; said array of non-volatile memory cells partitioned into a plurality of units, with each unit comprising a plurality of memory cells; an indicator memory cell associated with each unit of non-volatile memory cells; a counter circuit for counting the number of memory cells of each unit to be programmed, the counter circuit comprising a digital ‘0’ bit detector, the ‘0’ bit detector configured to check the bits to be programmed for ‘0’ bits; and a programming circuit for programming the memory cells of each unit using said programming current, when an output of the counter circuit indicates a certain percentage or less of the memory cells of each unit is to be programmed, and for programming the inverse of the memory cells of each unit and the indicator memory cell associated with each unit, using said programming current, when the output of the counter circuit indicates more than said certain percentage of the memory cells of each unit is to be programmed.
地址 San Jose CA US