发明名称 Flash Memory Device and Method for Handling Power Failure Thereof
摘要 A flash memory device. In one embodiment, the flash memory device includes a flash memory, a diode, a controller, and a capacitor. The flash memory has a voltage source pin. The diode is coupled between a voltage source and the voltage source pin of the flash memory. The controller is coupled to the flash memory via a data bus. The capacitor is coupled between the voltage source pin of the flash memory and a ground, and supplies power to the flash memory to enable the flash memory to complete writing of at least one data page when the level of the voltage source is lowered.
申请公布号 US2015003154(A1) 申请公布日期 2015.01.01
申请号 US201414485285 申请日期 2014.09.12
申请人 Silicon Motion, Inc. 发明人 Chen Hung-Chiang
分类号 G11C16/10;G11C16/30 主分类号 G11C16/10
代理机构 代理人
主权项 1. A method for handling power failure of a flash memory device, wherein the flash memory device comprises a controller, a flash memory, and a power failure handing circuit, the method comprising: coupling a first ready/busy pin of the flash memory to a second ready/busy pin of the controller, wherein when the flash memory processes a first write command, the flash memory sets the voltage of the first ready/busy pin to be equal to a specific level; coupling a power failure handling circuit between a voltage source and the second ready/busy pin of the controller; detecting whether the level of the voltage source has been kept at a predetermined level with the power failure handing circuit; when the level of the voltage source is lower than the predetermined level, setting the level of the second ready/busy pin to be the specific level with the power failure handling circuit to prevent the controller from sending a second write command to the flash memory.
地址 Jhubei City TW