发明名称 |
Flash Memory Device and Method for Handling Power Failure Thereof |
摘要 |
A flash memory device. In one embodiment, the flash memory device includes a flash memory, a diode, a controller, and a capacitor. The flash memory has a voltage source pin. The diode is coupled between a voltage source and the voltage source pin of the flash memory. The controller is coupled to the flash memory via a data bus. The capacitor is coupled between the voltage source pin of the flash memory and a ground, and supplies power to the flash memory to enable the flash memory to complete writing of at least one data page when the level of the voltage source is lowered. |
申请公布号 |
US2015003154(A1) |
申请公布日期 |
2015.01.01 |
申请号 |
US201414485285 |
申请日期 |
2014.09.12 |
申请人 |
Silicon Motion, Inc. |
发明人 |
Chen Hung-Chiang |
分类号 |
G11C16/10;G11C16/30 |
主分类号 |
G11C16/10 |
代理机构 |
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代理人 |
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主权项 |
1. A method for handling power failure of a flash memory device, wherein the flash memory device comprises a controller, a flash memory, and a power failure handing circuit, the method comprising:
coupling a first ready/busy pin of the flash memory to a second ready/busy pin of the controller, wherein when the flash memory processes a first write command, the flash memory sets the voltage of the first ready/busy pin to be equal to a specific level; coupling a power failure handling circuit between a voltage source and the second ready/busy pin of the controller; detecting whether the level of the voltage source has been kept at a predetermined level with the power failure handing circuit; when the level of the voltage source is lower than the predetermined level, setting the level of the second ready/busy pin to be the specific level with the power failure handling circuit to prevent the controller from sending a second write command to the flash memory. |
地址 |
Jhubei City TW |