Drive Circuit of Semiconductor Switching Element and Power Conversion Circuit Using the Same

摘要

Ringing is securely reduced in a case where a Schottky barrier diode of a wide-gap semiconductor is applied to a power conversion circuit. A gate voltage increasing circuit 11a is included. In a period since a gate voltage of a semiconductor switching element in one of upper and lower arms starts being increased from a value in an off-state until the gate voltage reaches a value in an on-state, the gate voltage increasing circuit 11a is configured to make a gate voltage of the semiconductor switching element in the other one of the upper and lower arms change from a value in an off-state into a value larger than the value in the off-state and is configured to control the value larger than the value in the off-state for a predetermined period of time.

主权项

1. A drive circuit of a semiconductor switching element, the drive circuit being configured to control a gate voltage of a semiconductor switching element in each of upper and lower arm circuits in each of which a Schottky barrier diode including a wide-gap semiconductor material as a base material is connected as a freewheel diode in parallel with the semiconductor switching element, the drive circuit comprising:
a gate voltage increasing circuit configured to make, in a period since a gate voltage of the semiconductor switching element in one of the upper and lower arms starts being increased from a value in an off-state until the gate voltage reaches a value in an on-state, a gate voltage of the semiconductor switching element in the other one of the upper and lower arms change from a value in an off-state into a value larger than the value in the off-state and configured to control the value larger than the value in the off-state for a predetermined period of time.