METHOD FOR FORMING TiN AND STORAGE MEDIUM

摘要

When forming a TiN film to be formed as a metallic hard mask for etching a film formed on a substrate to be processed, a first step and a second step are repeated a plurality of times to form a TiN film having reduced film stress. In the first step (step 1), the substrate to be processed is conveyed into a processing chamber, TiCl4 gas and a nitriding gas are fed into the processing chamber, the interior of which being kept in a depressurized state during this time, and a plasma from the gases is generated to form a TiN unit film. In the second step (step 2), a nitriding gas is fed into the processing container, a plasma of the gas is generated, and the TiN unit film is subjected to plasma nitriding.

主权项

1. A method of forming a TiN film to be used as a metallic hard mask in etching of an etching target film formed on a substrate to be processed, the method comprising:
alternately repeating a step of forming a TiN unit film and a step of performing a plasma nitriding process on the TiN unit film to form a TiN film having a reduced film stress, wherein the step of forming the TiN unit film is performed by loading the substrate to be processed into a processing chamber, supplying TiCl4 gas and a nitriding gas into the processing chamber while maintaining an inside of the processing chamber in a depressurized state, and generating a plasma from the TiCl4 gas and the nitriding gas, and wherein the step of performing the plasma nitriding process is performed by supplying a nitriding gas into the processing chamber and generating a plasma from the nitriding gas.