| 发明名称 |
ORGANIC THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF |
| 摘要 |
An organic thin film transistor and a manufacturing method thereof are provided. The organic thin film transistor comprises: a substrate; a gate electrode layer (21) and a source/drain electrode layer (24), formed on the substrate; an organic semiconductor layer (25), formed between source and drain electrodes (24) of the source/drain electrode layer; and an organic insulating layer (23), formed between the gate electrode layer (21) and the organic semiconductor layer (25) and made from an organic polymer material. |
| 申请公布号 |
US2015001513(A1) |
申请公布日期 |
2015.01.01 |
| 申请号 |
US201314354755 |
申请日期 |
2013.11.29 |
| 申请人 |
BOE TECHNOLOGY GROUP CO., LTD. |
发明人 |
Wang Xianghua;Xiong Xianfeng;Liu Ze;Qiu Longzhen |
| 分类号 |
H01L51/05;H01L51/00 |
主分类号 |
H01L51/05 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An organic thin film transistor, comprising:
a substrate; a gate electrode layer and a source/drain electrode layer, formed on the substrate; an organic semiconductor layer, formed between source and drain electrodes of the source/drain electrode layer; and an organic insulating layer, formed between the gate electrode layer and the organic semiconductor layer and made from an organic polymer material. |
| 地址 |
Beijing CN |
