| 发明名称 |
METHOD FOR TREATING WAFER |
| 摘要 |
A method for treating a wafer is provided. The method includes at least the following steps. A plasma process is performed on a front surface of the wafer, and the wafer is cleaned. The wafer is cleaned by applying deionized water with dissolved CO2 to the front surface of the wafer and applying a chemical solution to a back surface, opposite to the front surface, of the wafer. |
| 申请公布号 |
US2015004792(A1) |
申请公布日期 |
2015.01.01 |
| 申请号 |
US201313927326 |
申请日期 |
2013.06.26 |
| 申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
Chen Chih-Cheng |
| 分类号 |
H01L21/02;H01L21/311;B08B3/08 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for treating a wafer, comprising:
performing a plasma process on a front surface of the wafer; and cleaning the wafer, comprising:
applying deionized water with dissolved CO2 to the front surface of the wafer; andapplying a chemical solution to a back surface, opposite to the front surface, of the wafer. |
| 地址 |
HSINCHU TW |
