| 发明名称 |
GAS DIFFUSER UNIT, PROCESS CHAMBER AND WAFER PROCESSING METHOD |
| 摘要 |
A gas diffuser unit for a process chamber includes at least one controllable diffuser, a power source, and a controller. The at least one controllable diffuser is configured to generate controllable forces acting in various directions on a gaseous material in a flow of the gaseous material introduced into the process chamber, to spread the gaseous material inside the process chamber. The power source is coupled to the at least one controllable diffuser, and configured to supply power to the at least one controllable diffuser to generate the controllable forces. The controller is coupled to the power source and configured to control the power supplied by the power source to the at least one controllable diffuser. |
| 申请公布号 |
US2015002017(A1) |
申请公布日期 |
2015.01.01 |
| 申请号 |
US201313927631 |
申请日期 |
2013.06.26 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
HUANG Chien Kuo;HUANG Shih-Wen;LIOU Joung-Wei;SHEN Chia-I;CHEN Fei-Fan |
| 分类号 |
H01J37/32;B05B1/00;H01L21/67 |
主分类号 |
H01J37/32 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A gas diffuser unit for a process chamber, the gas diffuser unit comprising:
at least one controllable diffuser configured to generate controllable forces acting in various directions on a gaseous material in a flow of the gaseous material introduced into the process chamber, to spread the gaseous material inside the process chamber; a power source coupled to the at least one controllable diffuser, the power source configured to supply power to the at least one controllable diffuser to generate the controllable forces; and a controller coupled to the power source, the controller configured to control the power supplied by the power source to the at least one controllable diffuser. |
| 地址 |
Hsinchu TW |
