| 摘要 |
兼顾低成本化与电气特性及可靠性之劣化抑制。异质接合双极性电晶体(10A)，具有：集极层(16)，由以GaAs为主成分之半导体构成；第1基极层(18A)，与集极层(16)异质接合，由以与集极层(16)之主成分晶格失配之材料为主成分之半导体构成，且系导入失配差排之临界膜厚未满之膜厚；第2基极层(18b)，与第1基极层(18A)接合，由与集极层(16)之主成分晶格匹配之材料为主成分之半导体构成；以及射极层(20)，与第2基极层(18b)异质接合。; a base layer (18A), including a first base layer (18A) and a second base layer (18B), the first base layer (18A) being jointed heterogeneously with the collector layer (16), being formed of a semiconductor with main component of a material that is lattice-mismatched to the main component of the collector layer (16), and having a film thickness that is below the critical film thickness where the misfit dislocation is introduced, the second base layer (18B) being jointed with the first base layer (18A), and being formed of a semiconductor with main component of a material that is lattice-matched to the main component of the collector layer (16); and an emitter layer (20), jointed heterogeneously with the second base layer (18B). |
