发明名称 SEMICONDUCTOR COMPONENT HAVING A LATERAL SEMICONDUCTOR DEVICE AND A VERTICAL SEMICONDUCTOR DEVICE
摘要 A semiconductor component comprising a lateral semiconductor device, a vertical semiconductor device, and a leadframe is provided. The lateral semiconductor device has a first side and a second side, and a first electrode, a second electrode, and a control electrode positioned on the first side. The vertical semiconductor device has a first side and a second side, a second electrode and a control electrode of it positioned on the second side and a first electrode of it positioned on the first side. The leadframe electrically and respectively connected to each of the first electrode of the lateral semiconductor device, the second electrode of the lateral semiconductor device, the second electrode of the vertical semiconductor device, and the control electrodes, wherein the first side of the vertical semiconductor device is mounted on the second side of the lateral semiconductor device, and the first electrodes of both devices are electrically connected.
申请公布号 US2015001692(A1) 申请公布日期 2015.01.01
申请号 US201313930817 申请日期 2013.06.28
申请人 DELTA ELECTRONICS, INC. 发明人 TSAI Hsin-Chang;LEE Chia-Yen;LEE Peng-Hsin
分类号 H01L23/495;H01L25/18 主分类号 H01L23/495
代理机构 代理人
主权项 1. A semiconductor component comprising: a lateral semiconductor device having a first side and a second side, the lateral semiconductor device having an active region, positioned on the first side, comprising a first electrode, a second electrode, and a control electrode; a vertical semiconductor device having a first side and a second side, the vertical semiconductor device comprising a first electrode positioned on the first side and a second electrode and a control electrode positioned on the second side; and a leadframe electrically and respectively connected to each of the first electrode of the lateral semiconductor device, the second electrode of the lateral semiconductor device, the second electrode of the vertical semiconductor device, and the control electrodes, wherein the first side of the vertical semiconductor device is mounted on the second side of the lateral semiconductor device, and wherein the first electrode of the lateral semiconductor device is also electrically connected to the first electrode of the vertical semiconductor device.
地址 Taoyuan Hsien TW