Plasma Processing Chamber with Dual Axial Gas Injection and Exhaust

摘要

An electrode is exposed to a plasma generation volume and is defined to transmit radiofrequency power to the plasma generation volume, and includes an upper surface for holding a substrate in exposure to the plasma generation volume. A gas distribution unit is disposed above the plasma generation volume and in a substantially parallel orientation to the electrode. The gas distribution unit includes an arrangement of gas supply ports for directing an input flow of a plasma process gas into the plasma generation volume in a direction substantially perpendicular to the upper surface of the electrode. The gas distribution unit also includes an arrangement of through-holes that each extend through the gas distribution unit to fluidly connect the plasma generation volume to an exhaust region. Each of the through-holes directs an exhaust flow from the plasma generation volume in a direction substantially perpendicular to the upper surface of the electrode.

主权项

1. A method for semiconductor wafer processing, comprising:
holding a semiconductor wafer in a substantially parallel orientation to a gas distribution unit such that a plasma processing volume is formed between the semiconductor wafer and the gas distribution unit; flowing a plasma processing gas from within the gas distribution unit into the plasma processing volume in a direction substantially perpendicular to the semiconductor wafer; and directing an exhaust flow of plasma processing gas from within the plasma processing volume through the gas distribution unit in a direction substantially perpendicular to the semiconductor wafer, whereby the exhaust flow of plasma processing gas through the gas distribution unit is the only exhaust flow of plasma processing gas from within the plasma processing volume.