发明名称 |
INTEGRATED CIRCUIT FABRICATION |
摘要 |
A method for defining patterns in an integrated circuit comprises defining a plurality of features in a first photoresist layer using photolithography over a first region of a substrate. The method further comprises using pitch multiplication to produce at least two features in a lower masking layer for each feature in the photoresist layer. The features in the lower masking layer include looped ends. The method further comprises covering with a second photoresist layer a second region of the substrate including the looped ends in the lower masking layer. The method further comprises etching a pattern of trenches in the substrate through the features in the lower masking layer without etching in the second region. The trenches have a trench width. |
申请公布号 |
US2015004786(A1) |
申请公布日期 |
2015.01.01 |
申请号 |
US201414486890 |
申请日期 |
2014.09.15 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
Tran Luan C.;Lee John;Liu Zengtao;Freeman Eric;Nielsen Russell |
分类号 |
H01L21/768;H01L21/306;H01L21/308;H01L21/033 |
主分类号 |
H01L21/768 |
代理机构 |
|
代理人 |
|
主权项 |
1. (canceled) |
地址 |
Boise ID US |