主权项 |
1. A Schottky diode structure, comprising:
a semiconductor substrate having an active region; a first well region having a first conductive type formed in the active region; a first doped region having the first conductive type formed on the first well region; a first electrode disposed on the active region, covering the first doped region; a second electrode disposed on the active region, contacting to the first well region; a gate structure disposed on the first well region; and a second doped region, having a second conductive type opposite to the first conductive type, formed on the first well region, wherein the gate structure and the second doped region are disposed between the first and second electrodes. |