发明名称 |
STATIC ELECTRICITY PROTECTION CIRCUIT, ELECTRO-OPTIC DEVICE AND ELECTRONIC DEVICE |
摘要 |
In a static electricity protection circuit according to the invention, a first wiring is electrically connected to a drain of a first p-type transistor and a gate and a source of a first n-type transistor; a second wiring is electrically connected to a gate and a source of the first p-type transistor, a drain of the first n-type transistor, a drain of a second p-type transistor and a gate and a source of a second n-type transistor; and a third wiring is electrically connected to a gate and a source of the second p-type transistor and a drain of the second n-type transistor. |
申请公布号 |
US2015001626(A1) |
申请公布日期 |
2015.01.01 |
申请号 |
US201414314808 |
申请日期 |
2014.06.25 |
申请人 |
Seiko Epson Corporation |
发明人 |
Sokabe Hidenori;Yoshii Masahito |
分类号 |
H01L27/02 |
主分类号 |
H01L27/02 |
代理机构 |
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代理人 |
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主权项 |
1. A static electricity protection device comprising:
a first p-type transistor; a first n-type transistor; a second p-type transistor; a second n-type transistor; a first wiring; a second wiring; and a third wiring, wherein the first wiring is electrically connected to one of a source and a drain of the first p-type transistor, a gate of the first n-type transistor and one of a source and a drain of the first n-type transistor, wherein the second wiring is electrically connected to a gate of the first p-type transistor, the other one of the source and the drain of the first p-type transistor, the other one of the source and the drain of the first n-type transistor, one of a source and a drain of the second p-type transistor, a gate of the second n-type transistor and one of a source and a drain of the second n-type transistor, and wherein the third wiring is electrically connected to a gate of the second p-type transistor, the other one of the source and the drain of the second p-type transistor and the other one of the source and the drain of the second n-type transistor. |
地址 |
Tokyo JP |