发明名称 STATIC ELECTRICITY PROTECTION CIRCUIT, ELECTRO-OPTIC DEVICE AND ELECTRONIC DEVICE
摘要 In a static electricity protection circuit according to the invention, a first wiring is electrically connected to a drain of a first p-type transistor and a gate and a source of a first n-type transistor; a second wiring is electrically connected to a gate and a source of the first p-type transistor, a drain of the first n-type transistor, a drain of a second p-type transistor and a gate and a source of a second n-type transistor; and a third wiring is electrically connected to a gate and a source of the second p-type transistor and a drain of the second n-type transistor.
申请公布号 US2015001626(A1) 申请公布日期 2015.01.01
申请号 US201414314808 申请日期 2014.06.25
申请人 Seiko Epson Corporation 发明人 Sokabe Hidenori;Yoshii Masahito
分类号 H01L27/02 主分类号 H01L27/02
代理机构 代理人
主权项 1. A static electricity protection device comprising: a first p-type transistor; a first n-type transistor; a second p-type transistor; a second n-type transistor; a first wiring; a second wiring; and a third wiring, wherein the first wiring is electrically connected to one of a source and a drain of the first p-type transistor, a gate of the first n-type transistor and one of a source and a drain of the first n-type transistor, wherein the second wiring is electrically connected to a gate of the first p-type transistor, the other one of the source and the drain of the first p-type transistor, the other one of the source and the drain of the first n-type transistor, one of a source and a drain of the second p-type transistor, a gate of the second n-type transistor and one of a source and a drain of the second n-type transistor, and wherein the third wiring is electrically connected to a gate of the second p-type transistor, the other one of the source and the drain of the second p-type transistor and the other one of the source and the drain of the second n-type transistor.
地址 Tokyo JP