| 摘要 |
Memory cells having isolated charge sites and methods of fabricating memory cells having isolated charge sites are described. In an example, a nonvolatile charge trap memory device includes a substrate having a channel region, a source region and a drain region. A gate stack is disposed above the substrate, over the channel region. The gate stack includes a tunnel dielectric layer disposed above the channel region, a first charge-trapping region and a second charge-trapping region. The regions are disposed above the tunnel dielectric layer and separated by a distance. The gate stack also includes an isolating dielectric layer disposed above the tunnel dielectric layer and between the first charge-trapping region and the second charge-trapping region. A gate dielectric layer is disposed above the first charge-trapping region, the second charge-trapping region and the isolating dielectric layer. A gate electrode is disposed above the gate dielectric layer. |
