发明名称 |
NON-INTRUSIVE MEASUREMENT OF A WAFER DC SELF-BIAS IN SEMICONDUCTOR PROCESSING EQUIPMENT |
摘要 |
A direct (DC) voltage is applied to an electrode at a voltage value to clamp a workpiece to an electrostatic chuck in a processing chamber. The electrode is embedded into the electrostatic chuck. An electrostatic chuck current through the electrode at the DC voltage is measured. A DC self bias induced on the workpiece by a plasma is determined based on the electrostatic chuck current and the applied voltage. |
申请公布号 |
WO2014209618(A1) |
申请公布日期 |
2014.12.31 |
申请号 |
WO2014US41999 |
申请日期 |
2014.06.11 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
BELOSTOTSKIY, SERGEY G.;DINH, CHINH;NGUYEN, ANDREW;CHAFIN, MICHAEL G. |
分类号 |
H01L21/683;H01L21/66 |
主分类号 |
H01L21/683 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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