发明名称 |
SEMICONDUCTOR SUBSTRATE, METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE, SUBSTRATE FOR SEMICONDUCTOR GROWTH, METHOD FOR PRODUCING SUBSTRATE FOR SEMICONDUCTOR GROWTH, SEMICONDUCTOR ELEMENT, LIGHT-EMITTING ELEMENT, DISPLAY PANEL, ELECTRONIC ELEMENT, SOLAR CELL ELEMENT, AND ELECTRONIC DEVICE |
摘要 |
A semiconductor substrate that includes a semiconductor layer that exhibits high crystallinity includes a graphite layer formed of a heterocyclic polymer obtained by condensing an aromatic tetracarboxylic acid and an aromatic tetramine, and a semiconductor layer that is grown on the surface of the graphite layer, or includes a substrate that includes a graphite layer formed of a heterocyclic polymer obtained by condensing an aromatic tetracarboxylic acid and an aromatic tetramine on its surface, a buffer layer that is grown on the surface of the graphite layer, and a semiconductor layer that is grown on the surface of the buffer layer. |
申请公布号 |
EP2476787(A4) |
申请公布日期 |
2014.12.31 |
申请号 |
EP20100813840 |
申请日期 |
2010.09.07 |
申请人 |
THE UNIVERSITY OF TOKYO;TOKAI CARBON CO., LTD.;NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCEAND TECHNOLOGY |
发明人 |
FUJIOKA HIROSHI;HIRASAKI TETSURO;UE HITOSHI;YAMASHITA JUNYA;HATORI HIROAKI |
分类号 |
C30B29/38;C23C14/06;C23C14/14;C30B29/06;H01L21/203 |
主分类号 |
C30B29/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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