发明名称 SEMICONDUCTOR SUBSTRATE, METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE, SUBSTRATE FOR SEMICONDUCTOR GROWTH, METHOD FOR PRODUCING SUBSTRATE FOR SEMICONDUCTOR GROWTH, SEMICONDUCTOR ELEMENT, LIGHT-EMITTING ELEMENT, DISPLAY PANEL, ELECTRONIC ELEMENT, SOLAR CELL ELEMENT, AND ELECTRONIC DEVICE
摘要 A semiconductor substrate that includes a semiconductor layer that exhibits high crystallinity includes a graphite layer formed of a heterocyclic polymer obtained by condensing an aromatic tetracarboxylic acid and an aromatic tetramine, and a semiconductor layer that is grown on the surface of the graphite layer, or includes a substrate that includes a graphite layer formed of a heterocyclic polymer obtained by condensing an aromatic tetracarboxylic acid and an aromatic tetramine on its surface, a buffer layer that is grown on the surface of the graphite layer, and a semiconductor layer that is grown on the surface of the buffer layer.
申请公布号 EP2476787(A4) 申请公布日期 2014.12.31
申请号 EP20100813840 申请日期 2010.09.07
申请人 THE UNIVERSITY OF TOKYO;TOKAI CARBON CO., LTD.;NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCEAND TECHNOLOGY 发明人 FUJIOKA HIROSHI;HIRASAKI TETSURO;UE HITOSHI;YAMASHITA JUNYA;HATORI HIROAKI
分类号 C30B29/38;C23C14/06;C23C14/14;C30B29/06;H01L21/203 主分类号 C30B29/38
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