SURFACE CHARGE MITIGATION LAYER FOR MEMS SENSORS

摘要

A semiconductor device includes a substrate (14). At least one transducer is provided on the substrate. The at least one transducer includes at least one electrically conductive circuit element. A dielectric layer (28) is deposited onto the substrate over the at least one transducer. A surface charge mitigation layer (12) formed of a conductive material is deposited onto the outer surface of the dielectric layer with the surface charge mitigation layer being electrically coupled to ground potential. The surface charge mitigation layer may be deposited to a thickness of 10nm or less, and the transducer may comprise a microelectromechanical systems (MEMS) device, such as a MEMS pressure sensor. The surface charge mitigation layer may be patterned to include pores to enhance the flexibility as well as the optical properties of the mitigation layer.