| 摘要 |
A field effect transistor includes an oxide semiconductor layer, a source electrode, a drain electrode, a gate insulation film, and a gate electrode, wherein the oxide semiconductor layer has a first region including In(a) Sn(b) Zn(c) O(d) (where a > 0, b > 0, c > 0, d > 0, a + b + c = 1) and a second region including In(e) Ga(f) Zn(g) O(h) (where e > 0, f > 0, g > 0, h > 0, e + f + g = 1) disposed on a side further from the gate electrode than the first region. |
