| 摘要 |
<p>The present disclosure relates to a method of manufacturing an III-nitride semiconductor layer. The method of manufacturing an III-nitride semiconductor layer includes a step of forming a first metal nitride layer and a second nitride layer which contains a metal different from that of the first nitride layer in a substrate; a step of removing a first metal nitride layer; and a step of forming an III-nitride semiconductor layer of AlxGayIn1-x-yN (0<=x<=1,0<=y<=1,0<=x+y<=1) by using the second metal nitride layer as a seed.</p> |
