| 摘要 |
<p>[Objective] To maintain the light intensity enhancing effect of a surface emitting type semiconductor light emitting element equipped with a DBR layer, while suppressing fluctuations in light intensity variations in a great number of elements, which are produced from a single wafer, that accompany temperature changes. [Constitution] A semiconductor light emitting element that outputs emitted light having a predetermined emitted light peak wavelength A includes: at least a substrate (10); a lower distributed Bragg reflector layer (30) provided on the substrate (10); and a light emitting layer (20) provided on the lower distributed Bragg reflector layer (30). At least one phase changing layer (33) having a thickness of m»/2n (wherein n is the refractive index of the phase changing layer, and m is an integer 1 or greater) is provided within the lower distributed Bragg reflector layer (30).</p> |
