MANUFACTURING METHOD FOR INSULATED GATE BIPOLAR TRANSISTOR

摘要

A manufacturing method for an insulated gate bipolar transistor. The method comprises: providing a wafer with a front side and a back side, wherein the wafer comprises a semiconductor substrate (10) of a first conduction type, and forming an insulated gate type transistor unit on the front side of the wafer based on the semiconductor substrate (10); forming protective layers (7, 8) on the front side of the wafer; injecting foreign ions (12) of a second conduction type on the back side of the wafer; removing the protective layers (7, 8) formed on the front side of the wafer; and forming a first main electrode contact hole (16) in the insulated gate type transistor unit, and activating the foreign ions (12) of the second conduction type injected on the back side of the wafer through a hole injection heat activation process to form a semiconductor layer (13) of the second conduction type.