| 摘要 |
<p>A method for manufacturing a P-type semiconductor element for a refrigeration or heating device. The method is characterized in that the P-type semiconductor element is made of tellurium material, bismuth material and antimony material. The method comprises: firstly, smashing and grinding the tellurium material, the bismuth material and the antimony material to enable the size thereof to be 2000 meshes or more than 2000 meshes; and then, according to the proportion of each material in parts by weight, conducting proportioning on the materials to obtain a mixture, wherein the proportion thereof is 50 to 60 parts of tellurium, 15 to 20 parts of bismuth and 25 to 30 parts of antimony. When the P-type semiconductor element is in operation, the temperature difference between both ends thereof is larger, and through a test, when the P-type semiconductor element is in operation, the temperature difference between the cold end and the hot end thereof reaches about 73°C to 78°C. Therefore, the P-type semiconductor element has the advantages of high operation efficiency and lower energy consumption. The P-type semiconductor element is particularly suitable for being used to manufacture a refrigeration or heating device of a semiconductor.</p> |
