| 摘要 |
The invention relates to a radiation-emitting optoelectronic component. The radiation-emitting optoelectronic component comprises: a semiconductor chip, which emits primary radiation of a wavelength between 600 nm and 1000 nm during the operation of the component, a conversion element comprising a conversion material, which comprises ions of one or more metals selected from a group comprising La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Cr, Pb, and Mg and which nearly completely converts the primary radiation emitted by the semiconductor chip into secondary radiation of a wavelength between 1000 nm and 6000 nm. |
