GROUP-III NITRIDE SEMICONDUCTOR LASER ELEMENT, AND METHOD OF MANUFACTURING GROUP-III NITRIDE SEMICONDUCTOR LASER ELEMENT

摘要

The III-nitride semiconductor laser device is provided with the laser cavity exhibiting the high quality for the cavity mirrors and enabling low threshold current, on the semipolar plane of the support base in which the c-axis of the hexagonal III-nitride is inclined toward the m-axis. The faces 27 and 29 intersect with the m-n plane. The semiconductor laser device has the laser waveguide extending in the direction of the line of intersection between the m-n plane and the semipolar plane 17a, enabling light generation through inter-band transition with low threshold current. The faces 27 and 29 each extend from an edge 13c of the first surface 13a to an edge 13d of the second surface 13b. The faces 27 and 29 have respective recesses and are formed by press against the epi-surface. The faces 27 and 29 are formed without dry-etching and are different from cleaved facets such as c-planes, m-planes, or ±-planes.