发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
摘要 The purpose of the present invention is to provide a semiconductor device that is provided with a terminal region where electric field concentration can be effectively relaxed, while suppressing resist collapse during manufacture, and to provide a method for manufacturing the semiconductor device. This semiconductor device is provided with: a semiconductor element (110) formed on a semiconductor substrate formed of a first conductivity-type wide-band-gap semiconductor; and a plurality of second conductivity-type ring-like regions (2), which are formed on the semiconductor substrate (1) by surrounding the semiconductor element (110) in a planar view. At least one of the ring-like regions (2) is provided with one or more separating regions (5) that make the inner side and the outer side of the ring-like region (2) communicate with each other in a planar view.
申请公布号 WO2014208201(A1) 申请公布日期 2014.12.31
申请号 WO2014JP62129 申请日期 2014.05.02
申请人 MITSUBISHI ELECTRIC CORPORATION 发明人 EBIHARA KOHEI;MIURA NARUHISA;HAMADA KENJI;OKUNO KOJI
分类号 H01L29/861;G03F1/70;H01L21/329;H01L29/06;H01L29/41;H01L29/78;H01L29/868 主分类号 H01L29/861
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