| 摘要 |
Resistive random-access memory RRAM cells 10 are provided for storing information in a plurality of programmable cell states. An electrically-insulating matrix 11 is located between first electrodes 12 and second electrodes 3 such that an electrically-conductive path 14, can be formed within the matrix on application of a write voltage to the electrodes and which extends in a direction between the electrodes. The programmable cell states correspond to respective configurations of the conductive path in the matrix. An electrically conductive component 15 extends in a direction between the electrodes and is also in contact with the insulating matrix, and runs parallel with the electrically insulating matrix 11. The arrangement is such that the resistance presented by the electrically conductive component to a cell current produced by a read voltage, applied to the electrodes to read the programmed cell state, is at least that of the conductive path, and at most about that of the insulating matrix, in any of said cell states. The conductive component may form a sheath surrounding the electrically insulating matrix (figure 5), and may be tapered being narrower towards one of the electrodes (figure 14, 15). The conductive path may occupy at least 10% of the thickness of the insulating matrix perpendicular to a direction between the electrodes. The electrically insulating matrix may be elongate and may comprise of a nanowire. Another embodiment including a two state RRAM cell is included which are connected antiserially (Figure 19). Other embodiments use an annulus around a core member (figures 22 /23). A method of use is also included. |
