Provided are methods of depositing films comprising exposing at least a portion of a substrate to a metal precursor to provide a first metal on the substrate and an organometallic reducing agent to deposit a second metal on the substrate to form a mixture or alloy of the first metal and the second metal. Exposure to the metal precursor and organometallic reducing agent can be in either order or simultaneously.
申请公布号
WO2014210328(A1)
申请公布日期
2014.12.31
申请号
WO2014US44369
申请日期
2014.06.26
申请人
APPLIED MATERIALS, INC.;THOMPSON, DAVID;ANTHIS, JEFFREY W.