| 摘要 |
The purpose of the present invention is to solve a variety of problems associated with material selection restricted by band gaps and readily obtain a light-receiving element having sensitivity for long-wavelength light such as infrared. The light-receiving element (1) is provided with a semiconductor layer (10) having a pn junction region (10j), and a pair of electrodes (11,12) sandwiching the pn junction region (10j), and a forward bias voltage (V) is applied between the pair of electrodes (11,12) while light (L) of a specific wavelength is illuminated thereon so that near-field light is generated in the vicinity of the pn junction region (10j). Of the pair of electrodes (11,12), the electrode (11) on the side illuminated by the light (L) is constituted from a wiregrid polarizer (Wg) transmitting the light of the specific wavelength. |
