| 摘要 |
<p>In a surface emission-type semiconductor light-emitting element including a DBR layer, a variation in light intensity due to a temperature change in the formation of a large number of elements manufactured from one wafer is suppressed while maintaining a light intensity enhancement effect. In the semiconductor light-emitting element that outputs emitted light having a predetermined emission peak wavelength », including at least a substrate 10, a lower distributed Bragg reflective layer 12 provided on the substrate 10, and a light-emitting layer 20 provided on a lower distributed Bragg reflective layer 12, the light-emitting layer 20 includes one or more sets of two active layers 22 arranged at a distance of (1+2m) »/4n in an inactive layer 21, » is the emission peak wavelength, n is a refractive index of the light-emitting layer 20, and m is an integer of 0 or greater.</p> |
