| 摘要 |
<p>Embodiments of strain-balanced superlattice infrared detector devices and their fabrication are disclosed. In one embodiment, an infrared detector device (100) includes a first contact layer (110), an absorber superlattice region (120), a wider gap unipolar barrier region (130), and a second contact layer (140). The absorber superlattice region has a period (121) defined by a first InAs layer (122), strain-balancing structure (124), a second InAs layer (126), and an InAsSb layer (128). The strain-balancing structure (124) comprises an arbitrary alloy layer sequence containing at least one constituent element of aluminum or phosphor, e.g. InGaAs, AlInAs, InAsP. In another embodiment, the absorber superlattice region has a period defined by a first InAs layer, first strain-balancing structure, a second InAs layer, a first GaSb layer, a second strain-balancing structure, and a second GaSb layer. The first strain-balancing structure includes at least one constituent element of aluminum or phosphor, e.g. InGaAs, AlInAs, InAsP. The second strain-balancing structure includes GaInSb and GaSb.</p> |
