| 摘要 |
A thin film transistor (17) is provided with: a gate electrode (20); a gate insulating layer (21) which covers the gate electrode; a source electrode (30) and a drain electrode (40) which are provided on the gate insulating layer (21); and an organic semiconductor layer (50) which has a channel region (Ch1) between the source electrode and the drain electrode. The source electrode (30) and the drain electrode (40) comprise first conductive layers (31, 41) for increasing adhesion to the gate insulating layer (21), second conductive layers (32, 42) which have low electrical resistances, and third conductive layers (33, 43) which establish an ohmic contact with the organic semiconductor layer (50). The third conductive layers (33, 43) have first contact surfaces (33a, 43a) which are in contact with the gate insulating layer (21), and second contact surfaces (33b, 43b) which are in contact with lateral surfaces of the first conductive layers (31, 41) and lateral surfaces of the second conductive layers (32, 42), said lateral surfaces being on the channel region (Ch1) side. |
