发明名称 |
SINGLE RING DESIGN FOR HIGH YIELD, SUBSTRATE EXTREME EDGE DEFECT REDUCTION IN ICP PLASMA PROCESSING CHAMBER |
摘要 |
Embodiments of the invention provide a single ring comprising a circular ring-shaped body with an inner surface, closest in proximity to a centerline of the body, and an outer surface opposite the inner surface. The body has a bottom surface with a slot formed therein and a top surface with an outer end, adjacent to the outer surface, and an inner end adjacent to a slope extending, towards the centerline, down to a step on the inner surface. The body has a lip, disposed on the inner surface extending out from a vertical face below the step toward the centerline of the body, and is configured to support a substrate thereon. The body is sized such that a gap of less than about 2mm is formed on the lip between the substrate and the vertical face of the step. |
申请公布号 |
WO2014209492(A1) |
申请公布日期 |
2014.12.31 |
申请号 |
WO2014US36213 |
申请日期 |
2014.04.30 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
NG, SIU TANG;LEE, CHANGHUN;DAO, HUUTRI;LANE, ADAM;WILLWERTH, MICHAEL D. |
分类号 |
H01L21/02;H01L21/205;H01L21/3065 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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