RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SUBSTITUTED CROSSLINKABLE COMPOUND

摘要

[Problem] To provide: a resist underlayer film which is suppressed in generation of a sublimate and exhibits good embeddability when applied to a substrate having a hole pattern, while having high dry etching resistance, wiggling resistance, heat resistance and the like, and which is used for a lithography process; and a method for manufacturing a semiconductor device, which uses this resist underlayer film. [Solution] A resist underlayer film forming composition which contains a resin and a crosslinkable compound that is represented by formula (1) or formula (2). (In the formulae, Q1 represents a single bond or an m1-valent organic group; each of R1 and R4 represents an alkyl group with 2-10 carbon atoms or an alkyl group with 2-10 carbon atoms having an alkoxy group with 1-10 carbon atoms; each of R2 and R5 represents a hydrogen atom or a methyl group; and each of R3 and R6 represents an alkyl group with 1-10 carbon atoms or an aryl group with 6-40 carbon atoms.)