| 摘要 |
A method for producing a photovoltaic element with stabilized efficiency and a device that can be used for carrying out this method, for example in the form of a specially adapted continuous furnace, are presented. A silicon substrate that is to be provided with an emitter layer and electrical contacts is subjected to a stabilizing treatment step. In this step, hydrogen, for example coming from a hydrogenated silicon nitride layer, is introduced into the silicon substrate, for example within a zone (2) of maximum temperature. Subsequently, the silicon substrate can be rapidly cooled in a specific manner in a zone (3) in order to avoid hydrogen effusion. After that, the silicon substrate can be kept within a temperature range from 230°C to 450°C for a period of for example at least 10 seconds in a specific manner, for example in a zone (4). This allows the previously introduced hydrogen to assume a favourable bonding state. At the same time or subsequently, a regeneration may be carried out, in that excess minority charge carriers are produced in the substrate at a temperature of at least 90°C, preferably at least 230°C. Altogether, with the method proposed, a regeneration process in the production of a photovoltaic element can be speeded up significantly, and so it can for example be carried out in a suitably modified continuous furnace. |
