PLASMA PROCESSING DEVICE AND PLASMA PROCESSING METHOD

摘要

A plasma processing device (100) comprises: a processing container (1) housing a rectangular substrate (S) and capable of being vacuumed; an upper electrode (3) and a lower electrode (5) disposed facing each other; a high-frequency power supply (7) for supplying a high-frequency power to the upper electrode (3); and an impedance adjusting device (9) for adjusting the impedance of the upper electrode (3). The upper electrode (3) has a rectangular shape with long sides (3a) and short sides (3b). In the upper electrode (3), a feeding region (P1) to which the high-frequency power is supplied from the high-frequency power supply (7) via a feeder line (71) and a connection region (P2) to which the impedance adjusting device (9) is connected via a wire (91) are formed on mutually opposite sides of a facing surface (37) of the upper electrode (3), said facing surface (37) facing the lower electrode (5). The feeding region (P1) and the connection region (P2) are provided on the respective side portions of the long sides (3a) of the upper electrode (3).